MARKING A significant milestone in Odisha’s journey in semiconductor manufacturing, Chief Minister Mohan Charan Majhi on Saturday performed the groundbreaking ceremony for the country’s first end-to-end silicon carbide semiconductor production plant being set up SiCSem Private Limited.
The project, recently approved by the Union cabinet, will come up near the state capital with an investment of Rs 2,067 crore. The facility will create around 5,000 direct and indirect employment opportunities.
SicSem Private Limited is collaborating with Clas-SiC Wafer Fab Ltd., UK, to set up the integrated facility of Silicon Carbide (SiC)-based compound semiconductors in Info Valley, Bhubaneswar.
The project proposes to manufacture Silicon Carbide devices. This compound semiconductor fab will have an annual capacity of 60,000 wafers and packaging capacity of 96 million units. The proposed products will have applications in missiles, defence equipment, electric vehicles, railway, fast chargers, data centre racks, consumer appliances and solar power inverters.
“The Centre’s guidance and the India Semiconductor Mission’s initiatives have enabled the state to attract world-class investment, cutting-edge technology, and high-value employment opportunities,” said CM Majhi, expressing gratitude to Prime Minister Narendra Modi for supporting Odisha in its journey towards a semiconductor hub.
SicSem Private Limited is also establishing a Rs 64-crore Research and Innovation Centre at IIT-Bhubaneswar. Union Electronic and IT Minister Ashwini Vaishnaw has also approved Rs 5 crore from his MPLAD fund for ‘NaMo Semiconductor Laboratory’ at the institute.
According to officials, SicSem Private Limited has been allocated 23 acres of land by Odisha Industrial Infrastructure Development Corporation for the upcoming compound semiconductor manufacturing facility.
